Rod Mosely : rechercher sur Z-Library

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1

The structure of the honest polynomial m-degrees

Rod Downey, William Gasarch, Michael Moses

Journal:

Annals of Pure and Applied Logic

Année:

1994

Langue:

english

Fichier:

PDF, 1.82 MB

english, 1994

2

A low temperature integrated aluminum metallization technology for ULSI devices

Ted, Liang Y Chen, Dirk Brown, Paul Besser, Steve Voss, Rod Mosely

Journal:

Thin Solid Films

Année:

1998

Langue:

english

Fichier:

PDF, 991 KB

english, 1998

3

CVD AL for advanced interconnect applications

Karl A. Littau, Rod Mosely, Steve Zhou, Hong Zhang, Ted Guo

Journal:

Microelectronic Engineering

Année:

1997

Langue:

english

Fichier:

PDF, 768 KB

english, 1997

4

Coherent TiN Diffusion Barriers for Sub-0.5 μm Planarized AL Technology

Ngan, Ken, Mosely, Rod, Xu, Zheng, Raaijmakers, Ivo

Journal:

MRS Proceedings

Année:

1994

Langue:

english

Fichier:

PDF, 1.19 MB

english, 1994

5

SPIE Proceedings [SPIE Microelectronic Manufacturing - Austin, TX (Tuesday 18 October 1994)] Microelectronics Technology and Process Integration - Planar multilevel metallization technologies for ULSI devices

Xu, Zheng, Ngan, Ken, VanGogh, Jim, Mosely, Rod, Tanaka, Yoichiro, Kieu, H., Chen, Fusen E., Raaijmakers, Ivo J., Chen, Fusen E., Murarka, Shyam P.

Année:

1994

Langue:

english

Fichier:

PDF, 763 KB

english, 1994

6

SPIE Proceedings [SPIE Microelectronic Manufacturing - Austin, TX (Tuesday 18 October 1994)] Microelectronics Technology and Process Integration - Chemical Vapor deposition (CVD) TiN: a barrier metallization for submicron via and contact applications

Littau, Karl A., Mosely, Rod, Eizenberg, M., Tran, Hung V., Sinha, Ashok K., Dixit, Girish A., Jain, Manoj K., Chisholm, Michael F., Havemann, Robert H., Chen, Fusen E., Murarka, Shyam P.

Année:

1994

Langue:

english

Fichier:

PDF, 578 KB

english, 1994

7

SPIE Proceedings [SPIE Microelectronic Manufacturing '99 - Santa Clara, CA (Wednesday 22 September 1999)] Multilevel Interconnect Technology III - Integrated IMP Ti and MOCVD TiN for 300-mm W barrier and liner for sub-0.18-μm IC processing

Tolia, Anish, Menezes, Marlon, Li, Jason, Jackson, Michael, Pavate, Vikram, Khurana, Nitin, Mosely, Rod, Narasimhan, Murali K., Chang, Mei, Chen, Fusen E., Graef, Mart, Patel, Divyesh N.

Année:

1999

Langue:

english

Fichier:

PDF, 410 KB

english, 1999

8

SPIE Proceedings [SPIE Microelectronic Manufacturing '99 - Santa Clara, CA (Wednesday 22 September 1999)] Multilevel Interconnect Technology III - Ultrathin integrated ion metal plasma titanium and metallorganic titanium nitride liners for sub 0.18 μm W based metallization schemes for >500 MHz microprocessors

Khurana, Nitin, Pavate, Vikram, Jackson, Michael, Mandrekar, T., Fang, Z., Tolia, Anish, Luo, H., Li, Jason, Mosely, Rod, Narasimhan, Murali K., Chang, Mei, Chen, Fusen E., Graef, Mart, Patel, Divyesh

Année:

1999

Langue:

english

Fichier:

PDF, 668 KB

english, 1999